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參數(shù)資料
| 型號(hào)： | BF995A |
| 廠(chǎng)商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 中文描述： | N溝道雙柵MOS - Fieldeffect四極管，耗盡型 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | BF995A |
BF995
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (7)
Rev. 3, 20-Jan-99
Document Number 85009
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain current
Test Conditions
Type
Symbol
V
(BR)DS
Min
20
Typ
Max
Unit
V
I
D
= 10 A, –V
G1S
= –V
G2S
= 4 V
±
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±
V
(BR)G1SS
8
14
V
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±
V
(BR)G2SS
8
14
V
±
V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
I
G1SS
100
nA
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
±
I
G2SS
100
nA
V
= 15 V, V
= 0, V
= 4 V
DS
G1S
BF995
BF995A
BF995B
I
DSS
I
DSS
I
DSS
4
4
18
10.5
18
3.5
mA
mA
mA
V
G2S
9.5
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
DS
= 15 V, V
G2S
= 4 V, I
D
= 20 A
–V
G1S(OFF)
V
DS
= 15 V, V
G1S
= 0, I
D
= 20 A
–V
G2S(OFF)
3.5
V
Electrical AC Characteristics
V
DS
= 15 V, I
D
= 10 mA, V
G2S
= 4 V, f = 1 MHz , T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
y
21s
C
issg1
C
issg2
C
rss
C
oss
G
ps
G
ps
F
Min
12
Typ
15
3.7
1.6
25
1.6
20
50
1.8
Max
Unit
mS
pF
pF
fF
pF
dB
dB
dB
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
AGC range
Noise figure
V
G1S
= 0, V
G2S
= 4 V
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
V
G2S
= 4 to –2 V, f = 200 MHz
G
S
= 2 mS, G
L
= 0.5 mS, f = 200 MHz
2.5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BF995 | CAP CERAMIC 7.5PF 50V C0G 0603 |
| BF995B | ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% |
| BF996S | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF996SB | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF996SA | N.Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF995A-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 20V 0.03A 4-Pin(3+Tab) SOT-143 T/R |
| BF995B | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| BF995-GS08 | 制造商:Vishay Angstrohm 功能描述:Trans RF MOSFET N-CH 20V 0.03A 4-Pin(3+Tab) SOT-143 T/R |
| BF996 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SOT-143 |
| BF996S | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon N Channel MOSFET Tetrode (For input stages in UHF TV tuners High transconductance Low noise figure) |
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