參數(shù)資料
型號(hào): BF990A
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: N-channel dual-gate MOS-FET(N溝道雙柵極場(chǎng)效應(yīng)管)
中文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SOT-143, 4 PIN
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 71K
代理商: BF990A
April 1991
2
Philips Semiconductors
Product specification
N-channel dual-gate MOS-FET
BF990A
FEATURES
Protected against excessive input voltage surges by
integrated back-to-back diodes between gates
and source.
APPLICATIONS
RF applications such as:
– Television tuners with 12 V supply voltage
– Professional communication equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic SOT143
microminiature package with interconnected source
and substrate.
PINNING
PIN
SYMBOL
DESCRIPTION
1
2
3
4
s, b
d
g
2
g
1
source
drain
gate 2
gate 1
Fig.1 Simplified outline (SOT143) and symbol.
Marking code:
M87.
handbook, halfpage
s,b
d
g1
g2
4
3
2
1
Top view
MAM039
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
I
D
P
tot
T
j
Y
fs
drain-source voltage
drain current
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1 f = 1 MHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
feedback capacitance
f = 1 MHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
noise figure
f = 800 MHz; G
S
= 5 mS; B
S
= B
Sopt
;
I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
19
2.6
25
2
18
30
200
150
3
3
V
mA
mW
°
C
mS
pF
fF
dB
up to T
amb
= 60
°
C
f = 1 kHz; I
D
= 10 mA; V
DS
= 10 V; V
G2-S
= 4 V
C
ig1-s
C
rs
F
相關(guān)PDF資料
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