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參數(shù)資料
| 型號： | BF970 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PNP Planar RF Transistor |
| 中文描述： | 進(jìn)步黨射頻硅平面晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 51K |
| 代理商： | BF970 |
BF970
Vishay Telefunken
www.vishay.de
FaxBack +1-408-970-5600
2 (5)
Rev. 3, 20-Jan-99
Document Number 85005
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage –I
C
= 1 mA, I
B
= 0
DC forward current transfer ratio
Test Conditions
Symbol
–I
CES
–I
CBO
–I
EBO
–V
(BR)CEO
h
FE
Min
Typ
Max Unit
100
100
10
–V
CE
= 40 V, V
BE
= 0
–V
CB
= 20 V, I
E
= 0
–V
EB
= 2 V, I
C
= 0
A
nA
A
V
35
25
–V
CE
= 10 V, –I
C
= 3 mA
50
90
Electrical AC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Sym-
bol
f
T
C
cb
F
Min
Typ
Max
Unit
Transition frequency
Collector-base capacitance
Noise figure
–V
CE
= 10 V, –I
C
= 3 mA, f = 300 MHz
–V
CB
= 10 V, f = 1 MHz
–V
CE
= 10 V, –I
C
= 3 mA, Z
S
= 50 ,
f = 800 MHz
–V
CE
= 10 V, –I
C
= 3 mA, Z
L
= 500
f = 800 MHz
1000
0.4
4.2
MHz
pF
dB
5.0
Power gain
G
pb
13
14.5
dB
Collector current for G
pbmax
–V
CE
= 10 V, Z
L
= 500
f = 800 MHz
–I
C
5
mA
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