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參數(shù)資料
| 型號： | BF823 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (PNP) |
| 中文描述： | 小信號晶體管（進步黨） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BF823 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
at –I
C
= 100
μ
A, I
E
= 0
BF821
BF823
–V
(BR)CBO
–V
(BR)CBO
300
250
–
–
–
–
V
V
Collector-Emitter Breakdown Voltage
at –I
C
= 10 mA, I
B
= 0
BF823
–V
(BR)CEO
250
–
–
V
Collector-Emitter Breakdown Voltage
at R
BE
= 2.7 k
, –I
C
= 10 mA
BF821
–V
(BR)CER
300
–
–
V
Emitter-Base Breakdown Voltage
at –I
E
= 100
μ
A, I
C
= 0
–V
(BR)EBO
5
–
–
V
Collector-Base Cutoff Current
at –V
CB
= 200 V, I
E
= 0
–I
CBO
–
–
10
nA
Collector-Emitter Cutoff Current
at R
BE
= 2.7 k
, –V
CE
= 250 V
at R
BE
= 2.7 k
, –V
CE
= 200 V, T
j
= 150 °C
–I
CER
–I
CER
50
10
nA
μ
A
Collector Saturation Voltage
at –I
C
= 30 mA, –I
B
= 5 mA
–V
CEsat
–
–
0.8
V
DC Current Gain
at –V
CE
= 20 V, –I
C
= 25 mA
h
FE
50
–
–
–
Gain-Bandwidth Product
at –V
CE
= 10 V, –I
C
= 10 mA
f
T
60
–
–
MHz
Feedback Capacitance
at –V
CE
= 30 V, –I
C
= 0, f = 1 MHz
C
re
–
–
1.6
pF
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
430
1)
K/W
1)
Device on fiberglass substrate, see layout
BF821, BF823
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF823 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF823,215 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF823S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 25MA I(C) | SOT-23 |
| BF823T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 100MA I(C) | SOT-23 |
| BF824 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP RF SOT-23 |
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