參數(shù)資料
型號(hào)： BF822
廠商： DIOTEC SEMICONDUCTOR AG
英文描述： Surface mount Si-Epitaxial PlanarTransistors
中文描述： 表面貼裝硅外延PlanarTransistors
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 49K
代理商： BF822
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BF820, BF822
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
at I
C
= 100
μ
A, I
B
= 0
BF820
BF822
V
(BR)CBO
V
(BR)CBO
300
250
–
–
–
–
V
V
Collector-Emitter Breakdown Voltage
at I
C
= 10
m
A, I
E
= 0
BF822
V
(BR)CEO
250
–
–
V
Collector-Emitter Breakdown Voltage
at R
BE
= 2.7 k
, I
C
= 10
m
A
BF820
V
(BR)CER
300
–
–
V
Emitter-Base Breakdown Voltage
at I
E
= 100
μ
A, I
B
= 0
V
(BR)EBO
5
–
–
V
Collector-Base Cutoff Current
at V
CB
= 200 V, I
E
= 0
I
CBO
–
–
10
nA
Collector-Emitter Cutoff Current
at R
BE
= 2.7 k
, V
CE
= 250 V
at R
BE
= 2.7 k
, V
CE
= 200 V, T
j
= 150 °C
I
CER
I
CER
50
10
nA
μ
A
Collector Saturation Voltage
at I
C
= 30 mA, I
B
= 5 mA
V
CEsat
–
–
0.6
V
DC Current Gain
at V
CE
= 20 V, I
C
= 25 mA
h
FE
50
–
–
–
Gain-Bandwidth Product
at V
CE
= 10 V, I
C
= 10 mA
f
T
60
–
–
MHz
Feedback Capacitance
at V
CE
= 30 V, I
C
= 0, f = 1 MHz
C
re
–
–
1.6
pF
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
430
1)
K/W
1)
Device on fiberglass substrate, see layout
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
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BF822S 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 25MA I(C) | SOT-23
BF822T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | SOT-23
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