參數(shù)資料
型號: BF583
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN high-voltage transistors
中文描述: 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-202
文件頁數(shù): 3/8頁
文件大?。?/td> 63K
代理商: BF583
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BF583
BF585
BF587
collector-emitter voltage
BF583
BF585
BF587
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
300
350
400
V
V
V
V
CEO
open base
50
65
65
250
300
350
5
100
50
1.6
5
+150
150
+150
V
V
V
V
mA
mA
mA
W
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
open collector
in free air; T
amb
25
°
C
in free air; T
mb
25
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
78
25
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 300 V
I
E
= 0; V
CB
= 250 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 25 mA; V
CE
= 20 V
I
C
= 40 mA; V
CE
= 20 V
I
C
= 30 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V
50
20
70
20
20
100
600
2.5
1.8
110
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
C
c
C
re
f
T
collector-emitter saturation voltage
collector capacitance
feedback capacitance
transition frequency
mV
pF
pF
MHz
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BF587 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN high-voltage transistors
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