參數(shù)資料
型號: BF547
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN 1 GHz wideband transistor(NPN 1GHz寬帶晶體管)
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/11頁
文件大?。?/td> 96K
代理商: BF547
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz wideband transistor
BF547
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
from junction to soldering point
note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
40
0.8
TYP.
95
1.2
1
20
MAX.
UNIT
I
CBO
h
FE
f
T
C
re
G
UM
collector cut-off current
DC current gain
transition frequency
feedback capacitance
maximum unilateral power
gain; note 1
I
E
= 0; V
CB
= 10 V
I
C
= 2 mA; V
CE
= 10 V
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 1 mA; V
CE
= 10 V; f = 100 MHz
100
250
1.6
nA
GHz
pF
dB
G
UM
10 log
S
2
1
S
11
2
1
S
22
2
--------------------------------------------------------------dB
=
Fig.2 Power derating curve.
handbook, halfpage
Ptot
(mW)
0
50
100
200
300
100
0
200
MBB401
150
Ts (
o
C)
Fig.3
DC current gain as a function of collector
current.
V
CE
= 10 V.
handbook, halfpage
60
100
MBB397
20
hFE
1
10
1
10
2
10
IC
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