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| 型號(hào)： | BF485PN |
| 英文描述： | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 350V V(BR)CEO | 100MA I(C) | SC-74 |
| 中文描述： | 晶體管|晶體管|一對(duì)|互補(bǔ)| 350V五（巴西）總裁| 100mA的一（c）|律師- 74 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | BF485PN |
2000 Aug 02
3
Philips Semiconductors
Product specification
NPN/PNP high voltage transistors
BF485PN
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
from junction to ambient
in free air; note 1
208
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off current
I
E
= 0; V
CB
= 300 V;
I
E
= 0; V
CB
= 250 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 30 mA; V
CE
= 10 V
I
C
= 20 mA; I
B
= 2 mA
I
C
= 20 mA; I
B
= 2 mA
I
E
= I
e
= 0; V
CB
= 20 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz
60
50
50
50
50
100
250
850
6
nA
μ
A
nA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
CEsat
V
BEsat
C
c
f
T
saturation voltage
saturation voltage
collector capacitance
transition frequency
mV
mV
pF
MHz
handbook, halfpage
0
10
1
200
100
MLD391
1
IC (mA)
hFE
10
10
2
(2)
(3)
(1)
Fig.2
DC current gain as a function of collector
current: typical values.
TR1 (NPN)
; V
CE
= 10 V.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
55
°
C.
handbook, halfpage
IC
(mA)
0
2
(1)
(7)
(10)
(2)
(3)
(4)
(5)
10
150
50
0
100
4
VCE (V)
6
8
MLD392
(9)
(8)
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
TR1 (NPN).
(1) I
B
= 30 mA.
(2) I
B
= 27 mA.
(3) I
B
= 24 mA.
(4) I
B
= 21 mA.
(5) I
B
= 18 mA.
(6) I
B
= 15 mA.
(7) I
B
= 12 mA.
(8) I
B
= 9 mA.
(9) I
B
= 6 mA.
(10) I
B
= 3 mA.
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