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參數(shù)資料
| 型號(hào)： | BF423,116 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 250 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SC-43A, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | BF423,116 |
2004 Nov 10
3
Philips Semiconductors
Product specication
PNP high voltage transistors
BF421; BF423
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on a printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BF421
300
V
BF423
250
V
VCEO
collector-emitter voltage
open base
BF421
300
V
BF423
250
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
50
mA
ICM
peak collector current
100
mA
IBM
peak base current
50
mA
Ptot
total power dissipation
830
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 200 V; IE =0 A
10
nA
VCB = 200 V; IE = 0 A; Tj = 150 °C
10
A
IEBO
emitter-base cut-off current
VEB = 5 V; IC =0 A
50
nA
hFE
DC current gain
VCE = 20 V; IC = 25 mA
50
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5mA
0.6
V
Cre
feedback capacitance
VCE = 30 V; IC =ic = 0 A; f = 1 MHz
1.6
pF
fT
transition frequency
VCE = 10 V; IC = 10 mA; f = 100 MHz
60
MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF423A3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:PNP Epitaxial Planar Transistor |
| BF423A3S | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:PNP Epitaxial Planar Transistor |
| BF423G | 功能描述:兩極晶體管 - BJT 500mA 250V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF423L | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP high-voltage transistors |
| BF423S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 25MA I(C) | TO-92VAR |
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