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參數(shù)資料
| 型號： | BF421 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (PNP)(小信號晶體管（PNP）) |
| 中文描述： | 小信號晶體管（民進黨）（小信號晶體管（民進黨）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 39K |
| 代理商： | BF421 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
at –I
C
= 100
μ
A, I
E
= 0
BF421
BF423
–V
(BR)CBO
–V
(BR)CBO
300
250
–
–
–
–
V
V
Collector-Emitter Breakdown Voltage
at –I
C
= 10 mA, I
B
= 0
BF423
–V
(BR)CEO
250
–
–
V
Collector-Emitter Breakdown Voltage
at R
BE
= 2.7 k
, at –I
C
= 10 mA
BF421
–V
(BR)CER
300
–
–
V
Emitter-Base Breakdown Voltage
at –I
E
= 100
μ
A, I
C
= 0
–V
(BR)EBO
5
–
–
V
Collector-Base Cutoff Current
at –V
CB
= 200 V, I
E
= 0
–I
CBO
–
–
10
nA
Collector-Emitter Cutoff Current
at R
BE
= 2.7 k
, –V
CE
= 250 V
at R
BE
= 2.7 k
, –V
CE
= 200 V, T
j
= 150 °C
–I
CER
–I
CER
50
10
nA
μ
A
Collector Saturation Voltage
at –I
C
= 30 mA, –I
B
= 5 mA
–V
CEsat
–
–
0.8
V
DC Current Gain
at –V
CE
= 20 V, –I
C
= 25 mA
h
FE
50
–
–
–
Gain-Bandwidth Product
at –V
CE
= 10 V, –I
C
= 10 mA
f
T
60
–
–
MHz
Feedback Capacitance
at –V
CE
= 30 V, –I
C
= 0, f = 1 MHz
C
re
–
–
1.6
pF
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
150
1)
K/W
1)
Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
BF421, BF423
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BF421 RF | 制造商:SKMI/Taiwan 功能描述:TO 92;TRANSISTOR 625MW |
| BF421,112 | 功能描述:兩極晶體管 - BJT TRANS HV BULK DLT PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF421/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Voltage Transistor PNP |
| BF421＼BF423 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High voltage transistors |
| BF421_02 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:SILICON PNP TRIPLE DIFFUSED TYPE |
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