參數(shù)資料
型號: BF370
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: NPN medium frequency transistor
中文描述: 100 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, SC-43A, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 59K
代理商: BF370
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR TRANSISTOR
BF370R
TO-92
BEC
Low Level Amplifier Transistor.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current (Continuous)
Power Dissipation @ Ta=25 deg C
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
Lead Temperature for Soldering 1/16"
from Body for 10 Seconds.
Thermal Resistance
Junction to Case
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
VALUE
40
15
4.5
100
500
4.0
-55 to +150
UNIT
V
V
V
mA
mW
VCBO
VCEO
VEBO
IC
PD
mW/deg C
deg C
Tj, Tstg
TL
260
deg C
Rth (j-c)
Rth (j-a)
83.3
200
deg C/W
deg C/W
SYMBOL
VCBO
VCEO
VEBO
ICBO
TEST CONDITION
IC=100uA, IE=0
IC=100uA, IB=0
IE=100uA, IC=0
VCB=20V, IE=0
Ta=125 deg C
VCB=15V, IE=0
VEB=2V, IC=0
IC=10mA,VCE=1V
MIN
40
15
4.5
-
TYP
-
-
-
-
MAX
-
-
-
400
UNIT
V
V
V
nA
-
-
-
-
-
30
100
-
uA
nA
Emitter Cut off Current
DC Current Gain
DYNAMIC CHARACTERISTICS
Transistors frequency
IEBO
hFE
40
ft IC=10mA,VCE=10V
IC=40mA,VCE=10V
Cc
VCB=10V, IE=0, f=1MHz
Ce
VEB=1V, IC= Ic=0, f=1MHz
Cre
IC=0, VCE=10V, f=1MHz
GV
V(int) RMS
500
490
-
-
-
MHz
MHz
pF
pF
pF
mV
Collector Capacitance
Emitter Capacitance
Feedback Capacitance
Interference Voltage for K=1%
-
-
4.5
Typ 2.2
Typ 1.6
Typ 120
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
相關(guān)PDF資料
PDF描述
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