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參數(shù)資料
| 型號： | BF1208D |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1208D<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 1/22頁 |
| 文件大?。?/td> | 253K |
| 代理商： | BF1208D |
1.
Product profile
1.1 General description
The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads and an integrated switch. The integrated switch is operated by the gate1
bias of amplifier B.
The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor has a SOT666 micro-miniature plastic package.
1.2 Features
I
Two low noise gain controlled amplifiers in a single package. One with a fully
integrated bias and one with a partly integrated bias
I
Internal switch to save external components
I
Superior cross modulation performance during AGC
I
High forward transfer admittance
I
High forward transfer admittance to input capacitance ratio
1.3 Applications
I
Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N
digital and analog television tuners
N
professional communication equipment
BF1208D
Dual N-channel dual gate MOSFET
Rev. 01 — 16 May 2007
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
相關(guān)PDF資料 |
PDF描述 |
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| BF1208D | Dual N-channel dual-gate MOSFET |
| BF1208 | Dual N-channel dual-gate MOSFET |
| BF1208 | Dual N-channel dual-gate MOSFET |
| BF1210 | Dual N-channel dual-gate MOSFET |
| BF1210 | Dual N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1208D T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208D,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF120F | 制造商:Eaton Corporation 功能描述:BF120F RELAY A |
| BF120H | 制造商:Siemens 功能描述: |
| BF120M | 制造商:Siemens 功能描述: |
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