參數(shù)資料
型號: BDY90P
廠商: 意法半導體
英文描述: NPN Silicon Power Transistor(NPN硅功率晶體管)
中文描述: NPN硅功率晶體管(npn型硅功率晶體管)
文件頁數(shù): 2/4頁
文件大?。?/td> 61K
代理商: BDY90P
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.08
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
=V
CBO
1
mA
I
CEV
V
CE
=V
CEV
T
case
= 150
o
C
V
CE
=V
CEV
1
3
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-emitter
Saturation Voltage
V
BE(sat)
Base-emitter
Saturation Voltage
V
EB
= 6 V
I
C
= 100 mA
1
mA
80
V
I
C
= 5 A I
B
= 0.5 A
I
C
= 10 A I
B
= 1 A
0.5
1.5
V
V
I
C
= 5 A I
B
= 0.5 A
I
C
= 10 A I
B
= 1 A
1.2
1.5
V
V
h
FE
DC Current Gain
I
C
= 1 A V
CE
= 2 V
I
C
= 5 A V
CE
= 5 V
I
C
= 10 A V
CE
= 5 V
I
C
= 0.5 A V
CE
= 5 V
f = 5 MHz
I
C
= 5 A I
B1
= 0.5 A
V
CC
= 30 V
I
C
= 5 A I
B1
= -I
B2
= 0.5 A
V
CC
= 30 V
30
50
20
f
t
Transition-Frequency
70
MHz
t
on
Turn-on Time
0.35
μ
s
t
s
t
f
Storage Time
1.3
μ
s
μ
s
Fall Time
0.2
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
BDY90P
2/4
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