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參數(shù)資料
| 型號： | BDX53C |
| 廠商： | 意法半導體 |
| 英文描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 中文描述： | 互補性的芯片功率達林頓晶體管 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 80K |
| 代理商： | BDX53C |
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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in thispublication are
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are not authorized for use as critical components inlife support devices or systems without express written approval of STMicroelectronics.
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BDX53B - BDX53C - BDX54B- BDX54C
6/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDX53C | NPN EPITAXIAL SILICON TRANSISTOR |
| BDX53B | NPN EPITAXIAL SILICON TRANSISTOR |
| BDX53F | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| BDX54BFI | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
| BDX53BFI | Complementary Silicon Power Darlington Transistors(互補硅功率達林頓晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDX53C | 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220 |
| BDX53CG | 功能描述:達林頓晶體管 8A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDX53C-S | 功能描述:達林頓晶體管 100V 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDX53CTU | 功能描述:達林頓晶體管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDX53E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 140V V(BR)CEO | 8A I(C) | TO-220AB |
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