參數(shù)資料
型號: BDX33C
廠商: 意法半導(dǎo)體
英文描述: COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
中文描述: 互補性的芯片功率達林頓晶體管
文件頁數(shù): 1/4頁
文件大?。?/td> 35K
代理商: BDX33C
BDX33B BDX33C
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The
BDX33B
Epitaxial-Base
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switchingapplications.
The complementary PNP types are BDX34B and
BDX34Crespectively.
and
NPN
BDX33C
power
are
silicon
transistors
in
INTERNAL SCHEMATIC DIAGRAM
October 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Unit
NPN
PNP
BDX33B
BDX34B
80
80
BDX33C
BDX34C
100
100
V
CBO
V
CEO
I
C
I
CM
I
B
P
tot
T
stg
T
j
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Collector Current
Collector Peak Current
Base Current
Total Dissipation at T
c
25
o
C
Storage Temperature
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
V
V
A
A
A
W
o
C
o
C
10
15
0.25
70
-65 to 150
150
1
2
3
TO-220
R
1
Typ. = 10 K
R
2
Typ. = 150
1/4
相關(guān)PDF資料
PDF描述
BDX34C POWER TRANSISTORS(10A,70W)
BDX33B POWER TRANSISTORS(10A,70W)
BDX33C POWER TRANSISTORS(10A,70W)
BDX34 RJZ Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 12V; Output Voltage (Vdc): 15V; Power: 2W; 2W Single and Dual Outputs in DIP 14; 3kVDC and 4kVDC Isolation; Optional Continuous Short Circuit Protected; Custom Solutions Available; UL94V-0 Package Material; Efficiency up to 85%
BDX34A POWER TRANSISTORS(10A,70W)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BDX33C 制造商:STMicroelectronics 功能描述:TRANSISTOR DARLINGTON TO-220
BDX33CG 功能描述:達林頓晶體管 10A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDX33CP2 制造商:Rochester Electronics LLC 功能描述:- Bulk
BDX33C-S 功能描述:達林頓晶體管 100V 10A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDX33CTU 功能描述:達林頓晶體管 NPN Si Transistor Epitaxial RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel