參數(shù)資料
型號: BDW23B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 功率晶體管
英文描述: Hammer Drivers, Audio Amplifiers Applications
中文描述: 6 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: TO-220, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 150K
代理商: BDW23B
BDW23, BDW23A, BDW23B, BDW23C
NPN SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
AUGUST 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BDW24, BDW24A, BDW24B and BDW24C
G
50 W at 25°C Case Temperature
G
6 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3 V, 2 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDW23
BDW23A
BDW23B
BDW23C
BDW23
BDW23A
BDW23B
BDW23C
V
CBO
45
60
80
100
45
60
80
100
5
6
0.2
50
2
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
A
A
W
W
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
相關PDF資料
PDF描述
BDW23A NPN SILICON POWER DARLINGTONS
BDW23B NPN SILICON POWER DARLINGTONS
BDW23C NPN SILICON POWER DARLINGTONS
BDW24 PNP SILICON POWER DARLINGTONS
BDW24A PNP SILICON POWER DARLINGTONS
相關代理商/技術參數(shù)
參數(shù)描述
BDW23B-S 功能描述:達林頓晶體管 80V 6A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW23BTU 功能描述:達林頓晶體管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW23C 功能描述:達林頓晶體管 50W 6A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW23C-S 功能描述:達林頓晶體管 100V 6A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDW23CTU 功能描述:達林頓晶體管 NPN Epitaxial Sil RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel