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參數(shù)資料
| 型號： | BDT60A |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | PNP SILICON POWER DARLINGTONS |
| 中文描述： | 進(jìn)步黨穎電DARLINGTONS |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 168K |
| 代理商： | BDT60A |
BDT60, BDT60A, BDT60B, BDT60C
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
AUGUST 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BDT61, BDT61A, BDT61B and BDT61C
G
50 W at 25°C Case Temperature
G
4 A Continuous Collector Current
G
Minimum h
FE
of 750 at 1.5 V, 3 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BDT60
BDT60A
BDT60B
BDT60C
BDT60
BDT60A
BDT60B
BDT60C
V
CBO
-60
-80
-100
-120
-60
-80
-100
-120
-5
-4
-0.1
50
2
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
V
EBO
I
C
I
B
P
tot
P
tot
T
j
T
stg
T
A
V
A
A
W
W
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDT60B | PNP SILICON POWER DARLINGTONS |
| BDT60C | PNP SILICON POWER DARLINGTONS |
| BDT60 | PNP SILICON POWER DARLINGTONS |
| BDT60A | PNP SILICON POWER DARLINGTONS |
| BDT61 | NPN SILICON POWER DARLINGTONS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDT60AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistors |
| BDT60A-S | 功能描述:達(dá)林頓晶體管 100V 4A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDT60B | 功能描述:達(dá)林頓晶體管 50W 4A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDT60BF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon PNP Darlington Power Transistors |
| BDT60B-S | 功能描述:達(dá)林頓晶體管 100V 4A PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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