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參數(shù)資料
| 型號： | BD953 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN PLASTIC POWER TRANSISTORS |
| 中文描述： | npn型塑料功率晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 88K |
| 代理商： | BD953 |
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current (Peak value)
Total power dissipation upto T
mb
=25°C
Junction temperature
Storage temperature
I
CM
P
tot
T
j
T
stg
max.
max.
max.
8.0
40
150
–65 to +150
A
W
°C
°C
THERMAL RESISTANCE
From junction to ambient
From junction to mounting base
R
th j–a
R
th j–mb
70
K /W
K /W
3.12
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
949
950
951
952
953
954
955
956
Collector cutoff current
I
E
= 0; V
CB
= V
CBO
I
E
= 0; V
CB
= V
CBO
; Tj = 150°C
I
B
= 0; V
CE
= V
CEO
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 1 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
E
= 1 mA; I
C
= 0
Saturation voltage
I
C
= 2 A; I
B
= 0.2 A
Base emitter on voltage
I
C
= 2 A; V
CE
= 4 V
D.C. current gain
I
C
= 0.5 A; V
CE
= 4 V
I
C
= 2 A; V
CE
= 4 V
Transition frequency
I
C
= 0.5 A; V
CE
= 4 V; f = 1 MHz
I
CBO
I
CBO
I
CEO
max.
max.
max.
50
1.0
0.1
μA
mA
mA
I
EBO
max.
0.2
mA
V
CEO
V
CBO
V
EBO
min. 60
min. 60
min.
80
80
100
100
120
120
V
V
V
5.0
V
CEsat
*
max.
1.0
V
V
BE(on)
*
max.
1.4
V
h
FE
*
h
FE
*
min.
40
min.
20
f
T
min.
3
MHz
Switching time
V
CC
= 20 V; I
C
= 1 A
I
con
= 1A; I
Bon
= –I
Boff
= 0.1A
R
L
= 20
Turn on time
Turn off time
NPN
NPN
PNP
PNP
t
on
t
off
t
on
t
off
typ.
typ.
typ.
typ.
0.3
1.5
0.1
0.4
μs
μs
μs
μs
*Measured under pulse conditions: t
p
≤
300μs; duty cycle
≤
2%
BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
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