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| 型號： | BD900 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | PNP SILICON POWER DARLINGTONS |
| 中文描述： | 進(jìn)步黨穎電DARLINGTONS |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 151K |
| 代理商： | BD900 |
BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
AUGUST 1993 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with
BD895, BD897, BD899 and BD901
G
70 W at 25°C Case Temperature
G
8 A Continuous Collector Current
G
Minimum h
FE
of 750 at 3V, 3A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD896
BD898
BD900
BD902
BD896
BD898
BD900
BD902
V
CBO
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-0.3
70
2
V
Collector-emitter voltage (I
B
= 0)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Operating free-air temperature range
Operating junction temperature range
Storage temperature range
V
EBO
I
C
I
B
P
tot
P
tot
T
A
T
j
T
stg
V
A
A
W
W
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD902 | PNP SILICON POWER DARLINGTONS |
| BD898 | PNP SILICON POWER DARLINGTONS |
| BD900 | PNP SILICON POWER DARLINGTONS |
| BD905 | MS3112E22-41S |
| BD909 | COMPLEMENTARY SILICON POWER TRANSISTORS |
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