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參數(shù)資料
| 型號(hào)： | BD709 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率晶體管 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 97K |
| 代理商： | BD709 |
THERMAL DATA
R
thj-case
R
thj-case
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.67
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for
BD707/708
for
BD709
for
BD711/712
T
case
= 150
o
C
for
BD707/708
for
BD709
for
BD711/712
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 100 V
V
CE
= 30 V
V
CE
= 40 V
V
CE
= 50 V
100
100
100
1
1
1
μ
A
μ
A
μ
A
mA
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
for
BD707/708
for
BD709
for
BD711/712
100
100
100
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EB
= 5 V
1
mA
I
C
= 100 mA
for
BD707/708
for
BD709
for
BD711/712
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 4 A
I
B
= 0.4 A
1
V
V
CEK
V
BE
h
FE
Knee Voltage
I
C
= 3 A
I
C
= 4 A
I
C
= 0.5 A
I
C
= 2 A
I
B
= **
V
CE
= 4 V
V
CE
= 2 V
V
CE
= 2 V
for
BD707/708
for
BD709
V
CE
= 4 V
V
CE
= 4 V
for
BD707/708
for
BD709
for
BD711/712
0.4
V
Base-Emitter Voltage
1.5
V
DC Current Gain
I
C
= 4 A
I
C
= 10 A
40
30
30
15
5
120
10
8
8
400
150
f
T
Transition frequency
I
C
= 300 mA
V
CE
= 3 V
3
MHz
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
** Value for which I
C
=3.3 A at V
CE
= 2V.
For PNP types voltage and current values are negative.
BD707/708/709/711/712
2/6
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參數(shù)描述 |
|---|---|
| BD70GA3MEFJ-ME2 | 制造商:ROHM Semiconductor 功能描述:IC REG LDO 7.0V 0.3A 8HTSOP |
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