參數(shù)資料
型號: BD546C
廠商: Power Innovations International, Inc.
英文描述: PNP SILICON POWER TRANSISTORS
中文描述: 進步黨硅功率晶體管
文件頁數(shù): 1/6頁
文件大?。?/td> 88K
代理商: BD546C
BD546, BD546A, BD546B, BD546C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JUNE 1973 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with the
BD545 Series
G
85 W at 25°C Case Temperature
G
15 A Continuous Collector Current
G
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD546
BD546A
BD546B
BD546C
BD546
BD546A
BD546B
BD546C
V
CBO
-40
-60
-80
-100
-40
-60
-80
-100
-5
-15
85
3.5
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
A
W
W
°C
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
260
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