參數(shù)資料
型號： BD540A
廠商： Power Innovations International, Inc.
英文描述： PNP SILICON POWER TRANSISTORS
中文描述： 進步黨硅功率晶體管
文件頁數(shù)： 1/6頁
文件大?。?/td> 85K
代理商： BD540A
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JUNE 1973 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with the
BD539 Series
G
45 W at 25°C Case Temperature
G
5 A Continuous Collector Current
G
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD540
BD540A
BD540B
BD540C
BD540
BD540A
BD540B
BD540C
V
CBO
-40
-60
-80
-100
-40
-60
-80
-100
-5
-5
45
2
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
V
CEO
V
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
A
W
W
°C
°C
°C
°C
-65 to +150
-65 to +150
-65 to +150
260
相關PDF資料
PDF描述
BD540B ECONOLINE: RI - Custom Solutions Available- 1kVDC Isolation- No Extern. Components Required- UL94V-0 Package Material- No Heatsink Required- Efficiency to 87%
BD540C PNP SILICON POWER TRANSISTORS
BD543 RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; Power: 2W; Custom Solutions Available; 1kVDC Isolation; No External Components Required; Optional Continuous Short Circuit Protected; UL94V-0 Package Material; No Heatsink Required; Efficiency to 87%
BD543A NPN SILICON POWER TRANSISTORS
BD543B RI Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 15V; Power: 2W; Custom Solutions Available; 1kVDC Isolation; No External Components Required; Optional Continuous Short Circuit Protected; UL94V-0 Package Material; No Heatsink Required; Efficiency to 87%
相關代理商/技術參數(shù)
參數(shù)描述
BD540A-S 功能描述:兩極晶體管 - BJT 60V 5A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD540B 功能描述:兩極晶體管 - BJT 45W PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD540B-S 功能描述:兩極晶體管 - BJT 80V 5A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD540C 功能描述:兩極晶體管 - BJT 45W PNP Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD540C-S 功能描述:兩極晶體管 - BJT 100V 5A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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