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參數(shù)資料
| 型號： | BD536 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Complemetary Silicon Power Transistors(互補硅功率晶體管) |
| 中文描述： | Complemetary硅功率晶體管（互補硅功率晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 44K |
| 代理商： | BD536 |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
2.5
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for
BD533/534
for
BD535/536
for
BD537/538
V
CB
= 45 V
V
CB
= 60 V
V
CB
= 80 V
100
100
100
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
for
BD533/534
for
BD535/536
for
BD537/538
V
CE
= 45 V
V
CE
= 60 V
V
CE = 80 V
100
100
100
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE
Base-Emitter Voltage
h
FE
DC Current Gain
V
EB
= 5 V
1
mA
I
C
= 100 mA
for
BD533/534
for
BD535/536
for
BD537/538
45
60
80
V
V
V
I
C
= 2 A
I
C
= 6 A
I
C
= 2 A
I
B
= 0.2 A
I
B
= 0.6 A
V
CE
= 2 V
0.8
0.8
V
V
1.5
V
I
C
= 10 mA
V
CE
= 5 V
for
BD533/534
for
BD535/536
for
BD537/538
V
CE
= 2 V
V
CE
= 2 V
for
BD533/534
for
BD535/536
for
BD537/538
I
C
= 500 mA
I
C
= 2 A
20
20
15
40
25
25
15
f
T
Transition frequency
I
C
= 500 mA
V
CE
= 1 V
3
12
MHz
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe OperatingAreas
BD533/BD534/BD535/BD536/BD537/BD538
2/4
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