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參數(shù)資料
| 型號(hào)： | BD435 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率晶體管 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | BD435 |
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
BD433/434/435/436/437/438
4/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD436 | Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| BD437 | Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| BD438 | Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| BD439 | Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
| BD441 | Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD435 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-126 |
| BD435_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium Power Silicon NPN Transistor |
| BD435G | 功能描述:兩極晶體管 - BJT BIP NPN 4A 22V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD435S | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD435S_11 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Epitaxial Silicon Transistor |
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