參數(shù)資料
型號(hào): BD433
廠商: 意法半導(dǎo)體
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補(bǔ)性的芯片功率晶體管
文件頁數(shù): 2/4頁
文件大?。?/td> 70K
代理商: BD433
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.5
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
for
BD433/434
V
CB
= 22 V
for
BD435/436
V
CB
= 32 V
for
BD437/438
V
CB
= 45 V
for
BD433/434
V
CE
= 22 V
for
BD435/436
V
CE
= 32 V
for
BD437/438
V
CE
= 45 V
100
100
100
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
I
CES
Collector Cut-off
Current (V
BE
= 0)
100
100
100
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
EB
= 5 V
1
mA
I
C
= 100 mA for
BD433/434
for
BD435/436
for
BD437/438
22
32
45
V
V
V
I
C
= 2 A I
B
= 0.2 A
for
BD433/434
for
BD435/436
for
BD437/438
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
V
BE
Base-Emitter Voltage
I
C
= 10 mA V
CE
= 5 V
I
C
= 2 A V
CE
= 1 V
for
BD433/434
for
BD435/436
for
BD437/438
0.58
1.1
1.1
1.2
V
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
for
BD433/434
for
BD435/436
for
BD437/438
I
C
= 500 mA V
CE
= 1 V
I
C
= 2 A V
CE
= 1 V
for
BD433/434
for
BD435/436
for
BD437/438
40
40
30
85
50
50
40
130
130
130
140
h
FE1
/
h
FE2
Matched Pair
f
T
Transition frequency
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
IC = 500 mA V
CE
= 1 V
I
C
= 250 mA V
CE
= 1 V
1.4
3
MHz
BD433/434/435/436/437/438
2/4
相關(guān)PDF資料
PDF描述
BD434 COMPLEMENTARY SILICON POWER TRANSISTORS
BD435 COMPLEMENTARY SILICON POWER TRANSISTORS
BD436 Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管)
BD437 Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管)
BD438 Complemetary Silicon Power Transistors(互補(bǔ)硅功率晶體管)
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