參數(shù)資料
型號(hào)： BD246C
廠商： Power Innovations International, Inc.
英文描述： PNP SILICON POWER TRANSISTORS
中文描述： 進(jìn)步黨硅功率晶體管
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 91K
代理商： BD246C
BD246, BD246A, BD246B, BD246C
PNP SILICON POWER TRANSISTORS
P R O D U C T I N F O R M A T I O N
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
JUNE 1973 - REVISED MARCH 1997
Copyright 1997, Power Innovations Limited, UK
G
Designed for Complementary Use with the
BD245 Series
G
80 W at 25°C Case Temperature
G
10 A Continuous Collector Current
G
15 A Peak Collector Current
G
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAA
B
C
E
1
2
3
absolute maximum ratings
at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for t
p
≤
0.3 ms, duty cycle
≤
10%.
2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
,
V
BE(off)
= 0, R
S
= 0.1
, V
CC
= -20 V.
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (R
BE
= 100
)
BD246
BD246A
BD246B
BD246C
BD246
BD246A
BD246B
BD246C
V
CER
-55
-70
-90
-115
-45
-60
-80
-100
-5
-10
-15
-3
80
3
62.5
V
Collector-emitter voltage (I
C
= -30 mA)
V
CEO
V
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
LI
C
2
T
j
T
stg
T
L
V
A
A
A
W
W
mJ
°C
°C
°C
-65 to +150
-65 to +150
250
相關(guān)PDF資料
PDF描述
BD250 POWER TRANSISTORS(25A,125W)
BD250A POWER TRANSISTORS(25A,125W)
BD250B POWER TRANSISTORS(25A,125W)
BD250C POWER TRANSISTORS(25A,125W)
BD249 POWER TRANSISTORS(25A,125W)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD246C-S 功能描述:兩極晶體管 - BJT 100V 10A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD246-S 功能描述:兩極晶體管 - BJT 45V 10A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD249 功能描述:兩極晶體管 - BJT 125W NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD249A 功能描述:兩極晶體管 - BJT 125W NPN Silicon RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD249A-S 功能描述:兩極晶體管 - BJT 60V 25A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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