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參數(shù)資料
| 型號： | BD244C |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補性的芯片功率晶體管 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | BD244C |
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BD243B / BD243C / BD244B / BD244C
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| BD433 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD434 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD435 | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD436 | Complemetary Silicon Power Transistors(互補硅功率晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD244C | 制造商:STMicroelectronics 功能描述:TRANSISTOR PNP TO-220 |
| BD244CG | 功能描述:兩極晶體管 - BJT 6A 100V 65W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD244C-S | 功能描述:兩極晶體管 - BJT 100V 6A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD244CTU | 功能描述:TRANS PNP 100V 6A TO-220 制造商:fairchild semiconductor 系列:- 包裝:管件 零件狀態(tài):有效 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:6A 電壓 - 集射極擊穿（最大值）:100V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:1.5V @ 1A，6A 電流 - 集電極截止（最大值）:700μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:15 @ 3A，4V 功率 - 最大值:65W 頻率 - 躍遷:- 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220 標準包裝:50 |
| BD244-S | 功能描述:兩極晶體管 - BJT 45V 6A PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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