參數(shù)資料
型號: BD241C
廠商: 意法半導(dǎo)體
英文描述: COMPLEMENTARY SILICON POWER TRANSISTORS
中文描述: 互補(bǔ)性的芯片功率晶體管
文件頁數(shù): 2/4頁
文件大?。?/td> 66K
代理商: BD241C
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
V
CE
= rated V
CEO
0.2
mA
I
CEO
for
BD241A/BD242A
V
CE
= 30 V
for
BD241B/BD242B
V
CE
= 60 V
for
BD241C/BD242C
V
CE
= 60 V
0.3
0.3
0.3
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EB
= 5 V
1
mA
I
C
= 30 mA
for
BD241A/BD242A
for
BD241B/BD242B
for
BD241C/BD242C
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
I
C
= 3 A I
B
= 0.6 A
1.2
V
V
BE
h
FE
I
C
= 3 A V
CE
= 4 V
1.8
V
DC Current Gain
I
C
= 1 A V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
I
C
= 0.5 A V
CE
= 10 V f = 1MHz
I
C
= 0.5 A V
CE
= 10 V f = 1KHz
25
10
h
fe
Small Signal Current
Gain
3
20
Pulsed: Pulse duration = 300
μ
s, duty cycle
2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
BD241A/B/C/BD242A/B/C
2/4
相關(guān)PDF資料
PDF描述
BD241B COMPLEMENTARY SILICON POWER TRANSISTORS
BD242A COMPLEMENTARY SILICON POWER TRANSISTORS
BD242B COMPLEMENTARY SILICON POWER TRANSISTORS
BD242C COMPLEMENTARY SILICON POWER TRANSISTORS
BD241A COMPLEMENTARY SILICON POWER TRANSISTORS
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