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參數(shù)資料
| 型號(hào)： | BD241B |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率晶體管 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 66K |
| 代理商： | BD241B |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.13
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
V
CE
= rated V
CEO
0.2
mA
I
CEO
for
BD241A/BD242A
V
CE
= 30 V
for
BD241B/BD242B
V
CE
= 60 V
for
BD241C/BD242C
V
CE
= 60 V
0.3
0.3
0.3
mA
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EB
= 5 V
1
mA
I
C
= 30 mA
for
BD241A/BD242A
for
BD241B/BD242B
for
BD241C/BD242C
60
80
100
V
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
I
C
= 3 A I
B
= 0.6 A
1.2
V
V
BE
h
FE
I
C
= 3 A V
CE
= 4 V
1.8
V
DC Current Gain
I
C
= 1 A V
CE
= 4 V
I
C
= 3 A V
CE
= 4 V
I
C
= 0.5 A V
CE
= 10 V f = 1MHz
I
C
= 0.5 A V
CE
= 10 V f = 1KHz
25
10
h
fe
Small Signal Current
Gain
3
20
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
For PNP types voltage and current values are negative.
For the characteristics curves see TIP31/TIP32 series.
BD241A/B/C/BD242A/B/C
2/4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BD242A | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD242B | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD242C | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD241A | COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD243B | COMPLEMENTARY SILICON POWER TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD241BFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-220AB |
| BD241BFP | 制造商:STMicroelectronics 功能描述: |
| BD241BFP_01 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER TRANSISTORS |
| BD241B-S | 功能描述:兩極晶體管 - BJT 80V 3A NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD241BTU | 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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