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參數(shù)資料
| 型號： | BD237 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 中文描述： | 互補(bǔ)性的芯片功率晶體管 |
| 文件頁數(shù)： | 5/5頁 |
| 文件大小： | 75K |
| 代理商： | BD237 |
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license is granted byimplicationor otherwiseunder anypatentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublicationare subject tochange without notice. This publicationsupersedesand replacesall information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascriticalcomponentsinlifesupportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics -Printed in Italy- All Rights Reserved
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BD235/BD236/BD237/BD238
5/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BD237 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-126 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-126 |
| BD237/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium Power Silicon NPN Transistor |
| BD237D | 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
| BD237G | 功能描述:兩極晶體管 - BJT 2A 80V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BD237-S | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN EPITAXIAL SILICON POWER TRANSISTOR |
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