參數(shù)資料
型號(hào): BD137
廠商: 意法半導(dǎo)體
英文描述: NPN Silicon Transistors(NPN硅晶體管)
中文描述: NPN硅晶體管(npn型硅晶體管)
文件頁(yè)數(shù): 4/4頁(yè)
文件大?。?/td> 43K
代理商: BD137
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相關(guān)PDF資料
PDF描述
BD138 PNP Silicon Transistors(硅PNP晶體管)
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BD240C Complementary Silicon Power Transistors(互補(bǔ)硅功率晶體管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD137-10 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON TRANSISTORS
BD13710S 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD13710STU 功能描述:兩極晶體管 - BJT NPN Epitaxial Sil RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BD137-16 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN power transistors
BD13716S 功能描述:兩極晶體管 - BJT NPN Si Transistor Epitaxial RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2