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參數(shù)資料
| 型號： | BCY77IX |
| 英文描述： | SURGE ARRESTER GDT 110V AXIAL |
| 中文描述： | 晶體管|晶體管|進步黨| 60V的五（巴西）總裁| 100mA的一（c）|到18 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | BCY77IX |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
BCY77, BCY78
BCY79
TO-18
Complementary BCY58/59
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BCY77
BCY78
BCY79
UNIT
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current Continuous
Base Current Continuous
Power Dissipation@ Ta=25 degC
@ TC=45 deg C
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Junction to Ambient in Free Air
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
VCEO
VCES
VEBO
IC
IB
PD
60
60
5.0
100
50
32
32
5.0
200
50
600
1.0
45
45
5.0
200
50
V
V
V
mA
mA
mW
W
deg C
Tj, Tstg
-65 to +200
Rth(j-a)
Rth(j-c)
450
150
K/W
K/W
SYMBOL TEST CONDITION
VCEO
IC=2mA,IB=0
VCES
IC=10uA, VBE=0
VEBO
IE=1uA, IC=0
ICES
VCE=VCE max,VBE=0
VCE=50V, VBE=0
VCE=25V, VBE=0
VCE=35V, VBE=0
BCY77 BCY78
>60
>60
>5.0
<100 <100
<20
-
-
BCY79 UNIT
>45
>45
>5.0
<100
.-
-
<20
>32
>32
>5.0
V
V
V
nA
nA
nA
nA
-
<20
-
TA=150 deg C
VCE=60V, VBE=0
VCE=25V, VBE=0
VCE=35V, VBE=0
VCE=VCE, max
VBE=0.2V, Ta=100 deg C
VEB=4V, IC=0
VBE(on) IC=10uA, VCE=5V
IC=2mA, VCE=5V
IC=10mA,VCE=1V
IC=50mA,VCE=1V (2)
IC=100mA,VCE=1V (1)
<10
-
-
<20
-
<10
-
<20
.-
-
uA
uA
uA
uA
<10
<20
ICEX
Emitter Cut off Current
Base Emitter on Voltage
IEBO
<20
<20
<20
nA
V
V
V
V
V
TYP 0.75
TYP 0.55
0.6 to 0.75
TYP 0.68
TYP 0.72
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCY77VII | SURGE ARRESTER GDT 110V SMD |
| BCY77VIII | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-18 |
| BCY78-7 | TRANSISTOR | BJT | PNP | 32V V(BR)CEO | TO-18 |
| BCY78-9 | SURGE ARRESTER GDT 5000V AXIAL |
| BCY77A | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-18 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCY77VII | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-18 |
| BCY77VIII | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-18 |
| BCY77ザ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
| BCY77シ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
| BCY77ジ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTORS |
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