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參數(shù)資料
| 型號(hào)： | BCX70 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (NPN)(小信號(hào)晶體管（NPN）) |
| 中文描述： | 小信號(hào)晶體管（NPN）的（小信號(hào)晶體管（NPN）的） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 93K |
| 代理商： | BCX70 |
BCX70 SERIES
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
TYP.
MAX.
UNIT
DC Current Gain
at V
CE
= 5 V, I
C
= 10
m
A
at V
CE
= 5 V, I
C
= 10
m
A
at V
CE
= 5 V, I
C
= 10
m
A
at V
CE
= 5 V, I
C
= 10
m
A
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 1 V, I
C
= 50 mA
at V
CE
= 1 V, I
C
= 50 mA
at V
CE
= 1 V, I
C
= 50 mA
at V
CE
= 1 V, I
C
= 50 mA
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
BCX70K
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
D
30
40
100
120
180
250
380
50
70
90
100
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
220
310
460
630
D
D
D
D
Collector-Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.25 mA
at I
C
= 50 mA, I
B
= 1.25 mA
V
CEsat
V
CEsat
50
100
D
D
350
550
mV
mV
Base-Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.25 mA
at I
C
= 50 mA, I
B
= 1.25 mA
V
BEsat
V
BEsat
600
700
D
D
850
1050
mV
mV
Base-Emitter Voltage
at V
CE
= 5 V, I
C
= 2 mA
at V
CE
= 5 V, I
C
= 10
m
A
at V
CE
= 1 V, I
C
= 50 mA
V
BE
V
BE
V
BE
550
D
D
650
520
780
750
D
D
mV
mV
mV
Collector Cut-off Current
at V
CB
= 45 V
at V
CB
= 45 V, T
A
= 150
°
C
I
CBO
D
D
D
D
20
20
nA
m
A
Emitter Cut-off Current
at V
EB
= 4 V
I
EBO
D
D
20
nA
Gain-Bandwidth Product
at V
CE
= 5 V, I
C
= 10 mA, f = 100 MHz
f
T
100
250
D
MHz
Collector-Base Capacitance
at V
CB
= 10 V, f = 1 MH
Z
C
CBO
D
1.7
D
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 1 MH
Z
C
EBO
D
11
D
pF
Noise Figure
at V
CE
= 5 V, I
C
= 200
m
A, R
S
= 2 k
W
, f= 1kHZ, B = 200Hz
F
D
2
6
dB
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| BCX70G | 功能描述:兩極晶體管 - BJT SOT-23 NPN GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX70G T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX70G,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX70G | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| BCX70G/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | SOT-23 |
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