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參數(shù)資料
| 型號： | BCW73LT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | General Purpose Transistors(NPN Silicon) |
| 中文描述： | 通用晶體管（NPN硅） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 317K |
| 代理商： | BCW73LT1 |
LESHAN RADIO COMPANY, LTD.
M14–3/6
Noise Figure is Defined as:
NF = 20 log
10
(
–––––––––––––––)
1/ 2
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K
= Boltzman’s Constant (1.38 x 10
–23
j/ °K)
T
= Temperature of the Source Resistance ( °K)
R
s
= Source Resistance (
)
n
S
n
S
TYPICAL NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
f, FREQUENCY (Hz)
Figure 3. Noise Voltage
f, FREQUENCY (Hz)
Figure 4. Noise Current
e
n
I
C
=1.0 mA
100
μ
A
300
μ
A
30
μ
A
10
μ
A
I
I
C
=1.0mA
300
μ
A
100
μ
A
30
μ
A
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
NOISE FIGURE CONTOURS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
R
)
R
)
R
)
20
10
7.0
5.0
3.0
2.0
10
20
50
100
200
500
1.0k
2.0k
5.0k
10 k
10
20
50
100
200
500
1.0k
2.0k
5.0k
10 k
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
10
20
30
50
70
100
200
300
500 700 1.0K
2.0 dB
3.0 dB4.0dB
6.0 dB
10 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
8.0 dB
10 Hz to 15.7KHz
10
μ
A
1.0 dB
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
50
BCW72LT1
I
C
, COLLECTOR CURRENT (
μ
A)
Figure 5. Narrow Band, 100 Hz
I
C
, COLLECTOR CURRENT (
μ
A)
Figure 7. Wideband
I
C
, COLLECTOR CURRENT (
μ
A)
Figure 6. Narrow Band, 1.0 kHz
~
BANDWIDTH = 1.0 Hz
R
S
~
0
~
BANDWIDTH = 1.0 Hz
R
S
8
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