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參數(shù)資料
| 型號(hào)： | BCW68G |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Small Signal Transistor 330mW |
| 中文描述： | 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 89K |
| 代理商： | BCW68G |
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100
μ
A
at V
CE
= 1V, I
C
= 10mA
at V
CE
= 1V, I
C
= 100mA
at V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
h
FE
h
FE
h
FE
h
FE
50
120
160
60
–
–
–
–
–
–
–
–
250
–
400
–
V
CEsat
V
CEsat
–
–
–
–
0.3
0.7
V
V
V
BEsat
V
BEsat
–
–
–
–
1.25
2
V
V
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
V
(BR)CEO
45
–
–
V
Collector-Base Breakdown Voltage
at I
C
= 10
μ
A, I
B
= 0
V
(BR)CBO
60
–
–
V
Emitter-Base Breakdown Voltage
at I
E
= 10
μ
A, at I
C
= 0
V
(BR)EBO
5
–
–
V
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
at V
CB
= 45V, I
E
= 0, T
A
= 150
°
C
I
CBO
I
CBO
–
–
–
–
20
20
nA
μ
A
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
I
EBO
–
–
20
nA
Gain-Bandwidth Product
at V
CE
= 5V, I
C
= 50mA, f = 20MH
Z
f
T
–
200
–
MHz
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
C
CB
–
6
–
pF
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
C
EB
–
60
–
pF
Note:
(1) Pulse test: t
≤
300
μ
s, D = 2%
www.
mc c semi
.c om
M C C
B
CW68G
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| BCW68G_Q | 功能描述:兩極晶體管 - BJT SOT-23 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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