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參數(shù)資料
| 型號： | BCW66H |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Small Signal Transistor 330mW |
| 中文描述： | 800 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 90K |
| 代理商： | BCW66H |
www.
mc c semi
.c om
M C C
BCW66H
Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100
μ
A
at V
CE
= 1V, I
C
= 10mA
at V
CE
= 1V, I
C
= 100mA
at V
CE
= 2V, I
C
= 500mA
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
at I
C
= 500mA, I
B
= 50mA
h
FE
h
FE
h
FE
h
FE
80
18
250
100
–
–
–
–
–
–
–
0
630
V
CEsat
V
CEsat
–
–
–
–
0.3
0.7
V
V
V
BEsat
V
BEsat
–
–
–
–
1.25
2
V
V
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
V(
BR)CEO
45
–
–
V
Collector-Base Breakdown Voltage
at I
C
= 10
μ
A, I
B
= 0
V(
BR)CBO
75
–
–
V
Emitter-Base Breakdown Voltage
at I
E
= 10
μ
A, I
C
= 0
V(
BR)EBO
5
–
–
V
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
at V
CB
= 45V, I
E
= 0, T
A
= 150°C
I
CBO
I
CBO
–
–
–
–
20
20
nA
μ
A
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
I
EBO
–
–
20
nA
Gain-Bandwidth Product
at V
CE
= 10V, I
C
= 20mA, f = 100MHz f
T
–
100
–
MH
Z
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
C
CB
–
6
–
pF
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
C
EB
–
60
–
pF
Note:
(1) Pulse test: t
≤
300
μ
s, D = 2%
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