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參數(shù)資料
| 型號： | BCV71 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN general purpose transistors |
| 中文描述： | NPN通用型晶體管 |
| 封裝： | BCV71<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BCV72<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 206K |
| 代理商： | BCV71 |
1999 Apr 08
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCV71; BCV72
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μ
A; V
CE
= 5 V
100
10
100
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BCV71
BCV72
DC current gain
BCV71
BCV72
collector-emitter saturation
voltage
90
150
I
C
= 2 mA; V
CE
= 5 V
110
200
550
100
120
210
750
850
2.5
220
450
250
700
10
V
CEsat
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 2 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V; R
S
= 2 k
Ω
;
f = 1 kHz; B = 200 Hz
mV
mV
mV
mV
mV
pF
MHz
dB
V
BEsat
base-emitter saturation
voltage
V
BE
C
c
f
T
F
base-emitter voltage
collector capacitance
transition frequency
noise figure
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCV71 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCV71,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCV71 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| BCV71/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR |
| BCV71_02 | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
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