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參數(shù)資料
| 型號： | BCV64 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | ECONOLINE: REZ - Cost Effective- 1kVDC & 2kVDC Isolation- Custom Solutions Available- No Extern. Components Required- UL94V-0 Package Material- Efficiency to 85% |
| 中文描述： | 100 mA, 30 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 46K |
| 代理商： | BCV64 |
1999 May 21
3
Philips Semiconductors
Product specification
PNP general purpose double transistor
BCV64B
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on a printed-circuit board.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
3.
Group selection will be done on TR1. Due to matched dies, h
FE
values for TR2 are the same as for TR1.
V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
V
BE
decreases by approximately
2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
15
5
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 150
°
C
nA
μ
A
h
FE
DC current gain
TR1
TR2
collector-emitter saturation voltage I
C
=
10 mA; I
B
=
0.5 mA
collector-emitter saturation voltage I
C
=
100 mA; I
B
=
5 mA
TR1
TR2
base-emitter saturation voltage
base-emitter saturation voltage
TR1
base-emitter voltage
TR1
TR1
TR2
collector capacitance
TR1
transition frequency
TR1
I
C
=
2 mA; V
CE
=
5 V
I
C
=
2 mA; V
CE
=
700 mV; note 1 220
220
75
475
475
300
V
CEsat
mV
250
250
700
650
mV
mV
mV
V
BEsat
I
C
=
10 mA; I
B
=
0.5 mA; note 2
I
C
=
100 mA; I
B
=
5 mA; note 2
850
mV
V
BE
I
C
=
2 mA; V
CE
=
5 V; note 3
I
C
=
10 mA; V
CE
=
5 V; note 3
I
C
=
2 mA; V
CE
=
700 mV; note 3
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
600
650
700
750
820
mV
mV
mV
C
c
4
pF
f
T
I
C
=
10 mA; V
CE
=
5 V;
f = 100 MHz
100
MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCV64B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose double transistor |
| BCV64B T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCV64B,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCV65 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN/PNP general-purpose transistor |
| BCV65 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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