參數(shù)資料
型號： BCV61A
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： NPN general-purpose double transistors
中文描述： NPN 通用雙晶體管
封裝： BCV61<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 2002,;BCV61<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 49, 20
文件頁數(shù)： 3/13頁
文件大?。?/td> 138K
代理商： BCV61A
BCV61_4
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 18 December 2009
3 of 13
NXP Semiconductors
BCV61
NPN general-purpose double transistors
6.
Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
Device mounted on an FR4 PCB.
7.
Characteristics
Table 7.
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Transistor TR1
I
CBO
collector-base cut-off current
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min
Typ
-
Max
500
Unit
K/W
[1]
-
Characteristics
Conditions
Min
Typ
Max
Unit
V
CB
= 30 V;
I
E
= 0 A
V
CB
= 30 V;
I
E
= 0 A;
T
j
= 150
°
C
V
EB
= 5 V;
I
C
= 0 A
V
CE
= 5 V;
I
C
= 100
μ
A
V
CE
= 5 V;
I
C
= 2 mA
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
I
C
= 10 mA;
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
I
C
= 2 mA;
V
CE
= 5 V
I
C
= 10 mA;
V
CE
= 5 V
V
CE
= 5 V;
I
C
= 10 mA;
f = 100 MHz
V
CB
= 10 V;
I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V;
I
C
= 200
μ
A;
R
S
= 2 k
Ω
;
f = 1 kHz;
B = 200 Hz
-
-
15
nA
-
-
5
μ
A
I
EBO
emitter-base cut-off current
-
-
100
nA
h
FE
DC current gain
100
-
-
110
-
800
V
CEsat
collector-emitter saturation
voltage
-
90
250
mV
-
200
600
mV
V
BEsat
base-emitter saturation voltage
[1]
-
700
-
mV
[1]
-
900
-
mV
V
BE
base-emitter voltage
[2]
580
660
700
mV
[2]
-
-
770
mV
f
T
transition frequency
100
-
-
MHz
C
c
collector capacitance
-
2.5
-
pF
NF
noise figure
-
-
10
dB
相關(guān)PDF資料
PDF描述
BCV61B NPN general-purpose double transistors
BCV62A PNP general-purpose double transistors
BCV62C PNP general-purpose double transistors
BCV71 NPN general purpose transistors
BCW60C NPN general purpose transistors
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BCV61A,215 功能描述:兩極晶體管 - BJT NPN 30V 100mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BCV61A215 制造商:NXP Semiconductors 功能描述:TRANS NPN 30V 0.1A DUAL SOT143B
BCV61AE6327T 制造商:Infineon Technologies AG 功能描述:AF TRANS SOT143 T&R 3K
BCV61AE6327XT 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 30V 0.1A 4-Pin(3+Tab) SOT-143 T/R 制造商:Infineon Technologies AG 功能描述:GREEN, AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies 功能描述:Infineon Technologies BCV61AE6327XT JFET
BCV61B 制造商:Siemens 功能描述:100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR 制造商:Infineon Technologies AG 功能描述:Double Transistor NPN 30V 0.1A SOT143
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*