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參數(shù)資料
| 型號(hào)： | BCR5PM-12LG-A8 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | 400 W Transient Voltage Suppressor, SOD123W (SOD2 FlatPower), Reel Pack, SMD |
| 中文描述： | 三端雙向可控硅中功率使用 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 132K |
| 代理商： | BCR5PM-12LG-A8 |
BCR5PM-12LG
Rev.2.00 Mar 06, 2007 page 2 of 7
Parameter
Symbol
I
T (RMS)
Ratings
5
Unit
A
Conditions
RMS on-state current
Commercial frequency, sine full wave
360
°
conduction, Tc = 113
°
C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25
°
C, AC 1 minute,
T
1
T
2
G terminal to case
Surge on-state current
I
TSM
50
A
I
2
t for fusion
I
2
t
10.4
A
2
s
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
5
W
W
V
A
°
C
°
C
g
V
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Symbol
I
DRM
V
TM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Test conditions
Tj = 150
°
C, V
DRM
applied
Tc = 25
°
C, I
TM
= 7 A,
instantaneous measurement
Tj = 25
°
C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Repetitive peak off-state current
On-state voltage
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
(dv/dt)c
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
20
20
20
V
V
V
mA
mA
mA
Gate trigger voltage
Note2
Gate trigger curent
Note2
Tj = 25
°
C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (j-c)
in case of greasing is 0.5
°
C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
0.2/0.1
—
5/1
—
—
—
—
4.9
—
V
Tj = 125
°
C/150
°
C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125
°
C/150
°
C
°
C/W
V/
μ
s
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj = 125
°
C/150
°
C
2. Rate of decay of on-state commutating current
(di/dt)c = –2.5 A/ms
3. Peak off-state voltage
V
D
= 400 V
Supply Voltage
Time
Time
Time
Main Current
Main Voltage
(di/dt)c
V
D
(dv/dt)c
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