參數(shù)資料
型號: BCR10CS
廠商: Powerex Power Semiconductors
英文描述: MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
中文描述: 中功率使用非絕緣型,平面型鈍化
文件頁數(shù): 1/5頁
文件大?。?/td> 86K
代理商: BCR10CS
Feb.1999
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR10CS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
APPLICATION
Solid state relay, hybrid IC
BCR10CS
I
T (RMS)
......................................................................10A
V
DRM
..............................................................400V/600V
I
FGT
!
, I
RGT
!
, I
RGT
#
......................... 30mA (20mA)
8
5
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
8
1
Non-repetitive peak off-state voltage
8
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
500
12
600
720
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360
°
conduction, T
c
=103
°
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
2
s
W
W
V
A
°
C
°
C
g
Ratings
10
100
41.6
5
0.5
10
2
–40 ~ +125
–40 ~ +125
1.2
8
1. Gate open.
2 3
1
4
TYPE
NAME
3
+
VOLTAGE
CLASS
10.5 MAX
5
1
0.8
4.5
1.3
0.5
0
+0.3
–0
(
1
1
8
9
2
4
OUTLINE DRAWING
Dimensions
in mm
TO-220S
2 4
1
3
1
2
3
4
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
T
2
TERMINAL
Measurement
point of case
temperature
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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BCR10CS-12LA-T11 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)