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參數(shù)資料
| 型號： | BCP28 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 英文描述： | Surface mount Si-Epitaxial PlanarTransistors |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 269K |
| 代理商： | BCP28 |
1
) Tested with pulses t
p
= 300 s, duty cycle 2% – Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis 2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
01.11.2003
3
4=2
3
2
1
Darlington Transistors
BCP 28, BCP 48
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Typ.
Min.
Max.
Collector saturation volt. – Kollektor-Sttigungsspg.
1
)
- I
C
= 100 mA, - I
B
= 0.1 mA
Base saturation voltage – Basis-Sttigungsspannung
1
)
- V
CEsat
–
–
1 V
- I
C
= 100 mA, - I
B
= 0.1 mA
DC current gain – Kollektor-Basis-Stromverhltnis
1
)
- V
BEsat
–
–
1.5 V
- V
CE
= 1 V, - I
C
= 0.1 mA
BCP 28
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
4000
–
–
BCP 48
2000
–
–
- V
CE
= 5 V, - I
C
= 10 mA
BCP 28
10000
–
–
BCP 48
4000
–
–
- V
CE
= 5 V, - I
C
= 100 mA
BCP 28
20000
–
–
BCP 48
10000
–
–
- V
CE
= 5 V, - I
C
= 500 mA
BCP 28
4000
–
–
BCP 48
2000
–
–
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
f
T
–
200 MHz
–
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Thermal resistance – Wrmewiderstand
C
CB0
–
8 pF
–
junction to ambient air – Sperrschicht zu umgebender Luft
R
thA
R
thS
93 K/W
2
)
junction to soldering point – Sperrschicht zu Ltpad
17 K/W
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BCP 29, BCP 49
Pinning – Anschlubelegung
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BCP48 | Surface mount Si-Epitaxial PlanarTransistors |
| BCP29 | Surface mount Si-Epitaxial PlanarTransistors |
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| BCP52-10 | |
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參數(shù)描述 |
|---|---|
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| BCP-381- 2 | 制造商:Vishay BCcomponents 功能描述: |
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