參數(shù)資料
型號: BC868
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: 20 V, 2A NPN medium power transistors
中文描述: 20伏,2安NPN型中等功率晶體管
封裝: BC68-25PA<SOT1061 (HUSON3)|<<http://www.nxp.com/packages/SOT1061.html<1<Always Pb-free,;BC68PA<SOT1061 (HUSON3)|<<http://www.nxp.com/packages/SOT1061.html<1<Always
文件頁數(shù): 13/23頁
文件大?。?/td> 1176K
代理商: BC868
BCP68_BC868_BC68PA
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 8 — 18 October 2011
13 of 23
NXP Semiconductors
BCP68; BC868; BC68PA
20 V, 2 A NPN medium power transistors
7. Characteristics
Table 8.
T
amb
= 25
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off
current
[1]
Pulse test: t
p
300
s;
= 0.02.
Characteristics
Conditions
V
CB
= 25 V; I
E
= 0 A
V
CB
= 25 V; I
E
= 0 A;
T
j
= 150
C
V
EB
= 5 V; I
C
= 0 A
Min
-
-
Typ
-
-
Max
100
10
Unit
nA
A
I
EBO
emitter-base cut-off
current
DC current gain
-
-
100
nA
h
FE
V
CE
= 10 V
I
C
= 5 mA
V
CE
= 1 V
I
C
= 500 mA
I
C
= 1 A
I
C
= 2 A
V
CE
= 1 V
I
C
= 500 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 2 A; I
B
= 200 mA
V
CE
= 10 V; I
C
= 5 mA
V
CE
= 1 V; I
C
= 1 A
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 50 mA;
f = 100 MHz
50
-
-
DC current gain
[1]
85
-
-
-
375
-
-
[1]
60
[1]
40
DC current gain
h
FE
selection -25
collector-emitter
saturation voltage
[1]
160
-
-
-
-
-
22
375
0.5
0.6
0.7
1
-
V
CEsat
[1]
-
V
V
V
V
pF
[1]
-
V
BE
base-emitter voltage
[1]
-
[1]
-
C
c
collector capacitance
-
f
T
transition frequency
40
170
-
MHz
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