參數(shù)資料
型號: BC858B-7
廠商: DIODES INC
元件分類: 功率晶體管
英文描述: PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR
中文描述: 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 3/5頁
文件大?。?/td> 44K
代理商: BC858B-7
ELECTRICAL CHARACTERISTICS
(Continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
h
ie
Input Impedance
V
CE
= -5 V
for
group A
for
group B
I
C
= -2 mA
f = 1KHz
1.6
3.2
2.7
4.5
4.5
8.5
K
K
h
re
Reverse Voltage Ratio
V
CE
= -5 V
for
group A
for
group B
I
C
= -2 mA
f = 1KHz
1.5
2
10
-4
10
-4
h
fe
Small Signal Current
Gain
V
CE
= -5 V
for
group A
for
group B
I
C
= -2 mA
f = 1KHz
220
330
h
oe
Output Admittance
V
CE
= -5 V
for
group A
for
group B
I
C
= -2 mA
f = 1KHz
18
30
30
60
μ
s
μ
s
Pulsed: Pulse duration = 300
μ
s, duty cycle
2 %
BC857/BC858
3/5
相關PDF資料
PDF描述
BC857A High Speed CMOS Logic Hex Buffer/Line Driver with Non-Inverting 3-State Outputs 16-SOIC -55 to 125
BC858A High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125
BC858B PNP Small Signal Transistor 310mW
BC857B High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125
BC857A High Speed CMOS Logic Hex Buffer/Line Driver with Non-Inverting 3-State Outputs 16-PDIP -55 to 125
相關代理商/技術參數(shù)
參數(shù)描述
BC858B-7-F 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC858BDW1T1 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:Trans GP BJT PNP 30V 0.1A 6-Pin SC-88 T/R
BC858BE6327 制造商:Rochester Electronics LLC 功能描述:- Bulk
BC858BE6327HTSA1 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 30V 0.1A 3-Pin SOT-23 T/R 制造商:Infineon Technologies AG 功能描述:AF TRANSISTORS - Tape and Reel 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP AF 30V SOT-23
BC858BE6327T 制造商:Infineon Technologies AG 功能描述:AF TRANS,SOT23,T&R,3K,