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參數(shù)資料
| 型號(hào)： | BC858 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors (PNP)(小信號(hào)晶體管（PNP）) |
| 中文描述： | 小信號(hào)晶體管（民進(jìn)黨）（小信號(hào)晶體管（民進(jìn)黨）） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 231K |
| 代理商： | BC858 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
h-Parameters
at –V
CE
= 5 V, –I
C
= 2 mA, f = 1 kHz
Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance
Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
h
fe
h
fe
h
fe
h
ie
h
ie
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
–
–
–
1.6
3.2
6
–
–
–
–
–
–
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10
–4
2 · 10
–4
3 · 10
–4
–
–
–
4.5
8.5
15
30
60
110
–
–
–
–
–
–
k
k
k
μ
S
μ
S
μ
S
–
–
–
DC Current Gain
at –V
CE
= 5 V, –I
C
= 10
μ
A
Current Gain Group A
B
C
at –V
CE
= 5 V, –I
C
= 2 mA
Current Gain Group A
B
C
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
–
–
–
110
200
420
90
150
270
180
290
520
–
–
–
220
450
800
–
–
–
–
–
–
Thermal Resistance Junction to Substrate
Backside
R
thSB
–
–
320
1)
K/W
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
450
1)
K/W
Collector Saturation Voltage
at –I
C
= 10 mA, –I
B
= 0.5 mA
at –I
C
= 100 mA, –I
B
= 5 mA
–V
CEsat
–V
CEsat
–
–
90
250
300
650
mV
mV
Base Saturation Voltage
at –I
C
= 10 mA, –I
B
= 0.5 mA
at –I
C
= 100 mA, –I
B
= 5 mA
Base-Emitter Voltage
at –V
CE
= 5 V, –I
C
= 2 mA
at –V
CE
= 5 V, –I
C
= 10 mA
–V
BEsat
–V
BEsat
–
–
700
900
–
–
mV
mV
–V
BE
–V
BE
600
–
660
–
750
800
mV
mV
Collector-Emitter Cutoff Current
at –V
CE
= 80 V
at –V
CE
= 50 V
at –V
CE
= 30 V
at –V
CE
= 80 V, T
j
= 125 °C
at –V
CE
= 50 V, T
j
= 125 °C
at –V
CE
= 30 V, T
j
= 125 °C
at –V
CB
= 30 V
at –V
CB
= 30 V, T
j
= 150 °C
Gain-Bandwidth Product
at –V
CE
= 5 V, –I
C
= 10 mA, f = 100 MHz
BC856
BC857
BC858, BC859
BC856
BC857
BC858, BC859
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–I
CES
–I
CBO
–I
CBO
–
–
–
–
–
–
–
–
0.2
0.2
0.2
–
–
–
–
–
15
15
15
4
4
4
15
5
nA
nA
nA
μ
A
μ
A
μ
A
nA
μ
A
f
T
–
150
–
MHz
1)
Device on fiberglass substrate, see layout
BC856 THRU BC859
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| BC858A | 功能描述:兩極晶體管 - BJT Transistor 200mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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