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參數(shù)資料
| 型號： | BC857S |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 通用總線功能 |
| 英文描述： | High Speed CMOS Logic 8-Stage Synchronous Down Counters 16-SOIC -55 to 125 |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BC857S |
1
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
2
) Tested with pulses t
p
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
18
1
2
3
Type
Code
2
±
2
±0.1
0.9
±0.1
1
±
4
6
5
6.5
6.5
2.4
BC856S ... BC858S
General Purpose Transistors
PNP
Surface mount Si-Epitaxial
PlanarTransistors
Si-Epitaxial PlanarTransistoren
für die Oberflchenmontage
PNP
Version 2004-04-09
Dimensions / Mae in mm
Power dissipation – Verlustleistung
310 mW
Plastic case
Kunststoffgehuse
SOT-363
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
6 = C1
1 = E1
5 = B2
2 = B1
4 = E2
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A
= 25
/
C)
Grenzwerte
(T
A
= 25
/
C)
BC857S
45 V
50 V
5 V
310 mW
1
)
100 mA
200 mA
200 mA
200 mA
150
/
C
- 65…+ 150
/
C
BC856S
65 V
80 V
BC858S
30 V
30 V
Collector-Emitter-voltage
Collector-Base-voltage
Emitter-Base-voltage
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Peak Emitter current – Emitter-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CE0
- V
CB0
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
I
EM
T
j
T
S
Characteristics (T
j
= 25
/
C)
DC current gain – Kollektor-Basis-Stromverhltnis
2
)
- V
CE
= 5 V, - I
C
= 10
:
A
- V
CE
= 5 V, - I
C
= 2 mA
h-Parameters at - V
CE
= 5V, - I
C
= 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstrkung
Input impedance – Eingangs-Impedanz
Output admittance – Ausgangs-Leitwert
Reverse voltage transfer ratio
Spannungsrückwirkung
Kennwerte (T
j
= 25
/
C)
h
FE
h
FE
typ. 90 ... 270
110 ... 800
h
fe
typ. 220 ... 600
h
ie
h
oe
1.6 ... 15 k
S
18 ... 110
:
S
h
re
typ.1.5 ... 3 *10
-4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC857S_Q | 功能描述:兩極晶體管 - BJT SOT-23 PNP GP AMP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC857SE6327 | 制造商:Infineon Technologies AG 功能描述: |
| BC857SE6327BTSA1 | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.1A 6-Pin SOT-363 T/R 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP AF 45V SOT-363 |
| BC857SE6433HTMA1 | 制造商:Infineon Technologies AG 功能描述:TRANSISTOR PNP AF 45V SOT-363 |
| BC857SE6433XT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT PNP 45V 0.1A 6-Pin SOT-363 T/R |
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