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參數(shù)資料
| 型號(hào)： | BC857 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Small Signal PNP Transistors(小信號(hào)PNP晶體管) |
| 中文描述： | 小信號(hào)PNP晶體管（小信號(hào)晶體管進(jìn)步黨） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 44K |
| 代理商： | BC857 |
THERMAL DATA
R
thj-amb
R
thj-SR
Mountedon a ceramic substrate area = 10 x8 x 0.6mm
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Substrate
Max
Max
420
330
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CE
= -30 V
V
CE
= -30 V
I
C
= -10
μ
A
for
BC857
for
BC858
T
amb
= 150
o
C
-15
-5
nA
μ
A
V
(BR)CES
Collector-Emitter
Breakdown Voltage
(V
BE
= 0)
-50
-30
V
V
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= -10
μ
A
for
BC857
for
BC858
-50
-30
V
V
I
C
= -2 mA
for
BC857
for
BC858
I
C
= -10
μ
A
for
BC857
for
BC858
-45
-30
V
V
-6
-5
V
V
I
C
= -10 mA
I
C
= -100 mA
I
B
= -0.5 mA
I
B
= -5 mA
-0.09
-0.25
-0.3
-0.65
V
V
I
C
= -10 mA
I
C
= -100 mA
I
B
= -0.5 mA
I
B
= -5 mA
-0.75
-0.9
V
V
V
BE(on)
Base-Emitter On
Voltage
I
C
= -2 mA
I
C
= -10 mA
I
C
= -10
μ
A
for
group A
for
group B
I
C
= -2 mA
for
group A
for
group B
V
CE
= -5 V
V
CE
= -5 V
-0.6
-0.66
-0.72
-0.75
-0.82
V
V
h
FE
DC Current Gain
V
CE
= -5 V
V
CE
= -5 V
110
200
90
150
180
290
220
450
f
T
Transition Frequency
I
C
= -10 mA V
CE
= -5 V f = 100MHz
I
E
= 0
V
CB
= -10 V
150
MHz
C
CB
Collector Base
Capacitance
Noise Figure
f = 1 MHz
6
pF
NF
V
CE
= -5 V
f = 200 Hz
I
C
= -0.2 mA
R
G
= 2 K
f = 1KHz
2
1.2
10
4
dB
dB
Pulsed: Pulse duration = 300
μ
s, duty cycle
≤
2 %
BC857/BC858
2/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BC858 | Small Signal PNP Transistors(小信號(hào)PNP晶體管) |
| BC858B | High Speed CMOS Logic 14-Stage Binary Counter 16-SOIC -55 to 125 |
| BC857B | High Speed CMOS Logic Hex Buffer/Line Driver with Inverting 3-State Outputs 16-SOIC -55 to 125 |
| BC857A | High Speed CMOS Logic Hex Buffer/Line Driver with Non-Inverting 3-State Outputs 16-SOIC -55 to 125 |
| BC858A | High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BC857 T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC857,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC857,235 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-11 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC857 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23 |
| BC857.215 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PNP general purpose transistors |
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