參數(shù)資料
型號: BC856F
廠商: AUK Corp
英文描述: High Speed CMOS Logic Quad Two-Input OR Gates 14-SOIC -55 to 125
中文描述: 高速CMOS邏輯四2輸入或門 SOIC-14封裝 工作溫度:-55℃_125℃
文件頁數(shù): 4/8頁
文件大小: 40K
代理商: BC856F
1999 May 21
4
Philips Semiconductors
Preliminary specification
PNP general purpose transistors
BC856F; BC857F; BC858F series
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air; note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
15
5
100
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
30 V
I
E
= 0; V
CB
=
30 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
2 mA; V
CE
=
5 V
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BC856AF; BC857AF; BC858AF
BC856BF; BC857BF; BC858BF
BC857CF; BC858CF
collector-emitter saturation voltage
125
220
420
600
100
250
475
800
200
400
750
820
2.5
10
V
CEsat
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA; note 1
I
C
=
2 mA; V
CE
=
5 V
I
C
=
10 mA; V
CE
=
5 V
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V; f = 100 MHz
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
;
f = 1 kHz; B = 220 Hz
mV
mV
mV
mV
pF
MHz
dB
V
BE
base-emitter voltage
C
c
f
T
F
collector capacitance
transition frequency
noise figure
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