- 您現在的位置：買賣IC網 > PDF目錄384124 > BC856A-7 (DIODES INC) High Speed CMOS Logic 4-Bit Binary Full Adder with Fast Carry 16-PDIP -55 to 125 PDF資料下載
參數資料
| 型號： | BC856A-7 |
| 廠商： | DIODES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | High Speed CMOS Logic 4-Bit Binary Full Adder with Fast Carry 16-PDIP -55 to 125 |
| 中文描述： | 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數： | 2/2頁 |
| 文件大?。?/td> | 186K |
| 代理商： | BC856A-7 |
1
) Tested with pulses t
p
= 300 s, duty cycle 2% – Gemessen mit Impulsen t
p
= 300 s, Schaltverhltnis 2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
01.11.2003
15
General Purpose Transistors
BC 856 ... BC 860
Characteristics (T
j
= 25 C)
Kennwerte (T
j
= 25 C)
Typ.
Min.
Max.
Collector saturation volt. – Kollektor-Sttigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base saturation voltage – Basis-Sttigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 30 V, T
j
= 150 C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Noise figure – Rauschzahl
-V
CEsat
-V
CEsat
–
–
90 mV
200 mV
250 mV
600 mV
- V
BEsat
- V
BEsat
–
–
700 mV
900 mV
–
–
- V
BEon
- V
BEon
600 mV
–
650 mV
–
750 mV
820 mV
- I
CB0
- I
CB0
–
–
–
–
15 nA
5 A
- I
EB0
–
–
100 nA
f
T
100 MHz
–
–
C
CB0
–
–
6 pF
- V
CE
= 5 V, - I
C
= 200 A
R
G
= 2 k , f = 1 kHz,
f = 200 Hz
BC 856...
BC 858
F
–
2 dB
10 dB
BC 859/860
F
–
1 dB
4 dB
- V
CE
= 5 V, - I
C
= 200 A
R
G
= 2 k , f = 30...15 kHz
BC 859
BC 860
F
F
–
–
1.2 dB
1.2 dB
4 dB
4 dB
Equivalent noise voltage – quivalente Rauschspannung
- V
CE
= 5 V, - I
C
= 200 A
R
G
= 2 k , f = 10 ... 50 Hz
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BC 860
u
F
–
–
0.11 V
R
thA
420 K/W
2
)
BC 846 ... BC 850
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
verstrkungsgruppen pro Typ
BC 856A = 3A
BC 857A = 3E
BC 858A = 3J
BC 856B = 3B
BC 857B = 3F
BC 858B = 3K
BC 859B = 4B
BC 860B = 4F
BC 857C = 3G
BC 858C = 3L
BC 859C = 4C
BC 860C = 4G
相關PDF資料 |
PDF描述 |
|---|---|
| BC856B | High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-SOIC -55 to 125 |
| BC856B-7 | High Speed CMOS Logic 8-Input NAND Gate 14-SOIC -55 to 125 |
| BC856A | High Speed CMOS Logic 9-Bit Odd/Even Parity Generator/Checker 14-PDIP -55 to 125 |
| BC856B | High Speed CMOS Logic 8-Input NAND Gate 14-SOIC -55 to 125 |
| BC857C | High Speed CMOS Logic Dual Decade Ripple Counter 16-SOIC -55 to 125 |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BC856A-7-F | 功能描述:兩極晶體管 - BJT PNP BIPOLAR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BC856-A-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SWITCHING AND AMPLIFIER APPLICATIONS |
| BC856AE6327 | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| BC856A-E6327 | 制造商:Infineon Technologies AG 功能描述: |
| BC856AE6327T | 制造商:Infineon Technologies AG 功能描述:AF TRANS SOT23 T&R 3K |
發(fā)布緊急采購，3分鐘左右您將得到回復。