參數(shù)資料
型號: BC856
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: PNP general purpose transistors
中文描述: PNP通用型晶體管
封裝: BC856<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BC856A<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;B
文件頁數(shù): 4/10頁
文件大?。?/td> 158K
代理商: BC856
2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856; BC857; BC858
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
300
μ
s;
δ
0.02.
SYMBOL
PARAMETER
CONDITIONS
V
CB
=
30 V; I
E
= 0
V
CB
=
30 V; I
E
= 0;
T
j
= 150
°
C
V
EB
=
5 V; I
C
= 0
I
C
=
2 mA; V
CE
=
5 V
MIN.
TYP.
1
MAX.
15
4
UNIT
I
CBO
collector-base cut-off current
nA
μ
A
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC856
BC857
BC856A; BC857A
BC856B; BC857B; BC858B
BC857C
collector-emitter saturation voltage
100
nA
125
125
125
220
420
75
250
475
800
250
475
800
300
650
V
CEsat
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA;
note 1
I
C
=
10 mA; I
B
=
0.5 mA
I
C
=
100 mA; I
B
=
5 mA;
note 1
I
C
=
2 mA; V
CE
=
5 V
I
C
=
10 mA; V
CE
=
5 V
V
CB
=
10 V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
=
5 V; I
C
=
10 mA;
f = 100 MHz
I
C
=
200
μ
A; V
CE
=
5 V;
R
S
= 2 k
Ω
; f = 1 kHz;
B = 200 Hz
mV
mV
V
BEsat
base-emitter saturation voltage
700
850
mV
mV
V
BE
base-emitter voltage
600
650
4.5
750
820
mV
mV
pF
C
c
collector capacitance
f
T
transition frequency
100
MHz
F
noise figure
2
10
dB
相關(guān)PDF資料
PDF描述
BC857 PNP general purpose transistors
BC857CT High Speed CMOS Logic Dual 4-Stage Binary Counter 14-SOIC -55 to 125
BC857BT High Speed CMOS Logic Octal D-Type Flip-Flop with Data Enable 20-SOIC -55 to 125
BC857BT-7 Wideband Video Quad SPST
BC857AT High Speed CMOS Logic Hex Buffer/Line Driver with Non-Inverting 3-State Outputs 16-SOIC -55 to 125
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BC856,215 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC856 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23
BC856/T1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SMD KLEINSIGNAL UNIVERSAL
BC856_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Epitaxial Silicon Transistor
BC856_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor